Article Versions Notes

Yang H, Qin S, Zheng X, Wang G, Tan Y, Peng G, Zhang X. An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials. Nanomaterials. 2017; 7(10):286. https://doi.org/10.3390/nano7100286

Yang, Hang, Shiqiao Qin, Xiaoming Zheng, Guang Wang, Yuan Tan, Gang Peng, and Xueao Zhang. 2017. "An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials" Nanomaterials 7, no. 10: 286. https://doi.org/10.3390/nano7100286

Yang, H., Qin, S., Zheng, X., Wang, G., Tan, Y., Peng, G., & Zhang, X. (2017). An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials. Nanomaterials, 7(10), 286. https://doi.org/10.3390/nano7100286