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Journal: NanomaterialsVolume: 15Number: 343
Article: High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO2/SiO2 Stacked Gate Dielectric in Trench Structures
- Authors:
- Qimin Huang1,2,3,
- Yunduo Guo1,2,3 and
- Anfeng Wang1,2,3
- et al.
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