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Journal: NanomaterialsVolume: 14Number: 523
Article: Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment
  • Authors:
  • Xinling Xie†,
  • Qiang Wang† and
  • Maolin Pan
  • et al.
Link: https://www.mdpi.com/2079-4991/14/6/523

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