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Journal: Nanomaterials, 2024
Volume: 14
Number: 523
523
Article: Improved V_th Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O₂ Plasma Treatment
Authors: by Xinling Xie, Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Hai Huang, Xin Hu and Min Xu
Link: https://www.mdpi.com/2079-4991/14/6/523

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