Article Versions Notes

Jang H, Hyeong S-K, Park B, Kim T-W, Bae S, Jang SK, Kim Y, Lee S-K. Permanent Strain Engineering of Molybdenum Disulfide Using Laser-Driven Stressors for Energy-Efficient Resistive Switching Memory Devices. Nanomaterials. 2024; 14(23):1872. https://doi.org/10.3390/nano14231872

Jang, Heeyoon, Seok-Ki Hyeong, Byeongjin Park, Tae-Wook Kim, Sukang Bae, Sung Kyu Jang, Yonghun Kim, and Seoung-Ki Lee. 2024. "Permanent Strain Engineering of Molybdenum Disulfide Using Laser-Driven Stressors for Energy-Efficient Resistive Switching Memory Devices" Nanomaterials 14, no. 23: 1872. https://doi.org/10.3390/nano14231872

Jang, H., Hyeong, S.-K., Park, B., Kim, T.-W., Bae, S., Jang, S. K., Kim, Y., & Lee, S.-K. (2024). Permanent Strain Engineering of Molybdenum Disulfide Using Laser-Driven Stressors for Energy-Efficient Resistive Switching Memory Devices. Nanomaterials, 14(23), 1872. https://doi.org/10.3390/nano14231872