Alshaikh, A.;                     Peng, J.;                     Zierold, R.;                     Blick, R.H.;                     Heyn, C.    
        Vertical Electric-Field-Induced Switching from Strong to Asymmetric Strong–Weak Confinement in GaAs Cone-Shell Quantum Dots Using Transparent Al-Doped ZnO Gates. Nanomaterials 2024, 14, 1712.
    https://doi.org/10.3390/nano14211712
    AMA Style
    
                                Alshaikh A,                                 Peng J,                                 Zierold R,                                 Blick RH,                                 Heyn C.        
                Vertical Electric-Field-Induced Switching from Strong to Asymmetric Strong–Weak Confinement in GaAs Cone-Shell Quantum Dots Using Transparent Al-Doped ZnO Gates. Nanomaterials. 2024; 14(21):1712.
        https://doi.org/10.3390/nano14211712
    
    Chicago/Turabian Style
    
                                Alshaikh, Ahmed,                                 Jun Peng,                                 Robert Zierold,                                 Robert H. Blick,                                 and Christian Heyn.        
                2024. "Vertical Electric-Field-Induced Switching from Strong to Asymmetric Strong–Weak Confinement in GaAs Cone-Shell Quantum Dots Using Transparent Al-Doped ZnO Gates" Nanomaterials 14, no. 21: 1712.
        https://doi.org/10.3390/nano14211712
    
    APA Style
    
                                Alshaikh, A.,                                 Peng, J.,                                 Zierold, R.,                                 Blick, R. H.,                                 & Heyn, C.        
        
        (2024). Vertical Electric-Field-Induced Switching from Strong to Asymmetric Strong–Weak Confinement in GaAs Cone-Shell Quantum Dots Using Transparent Al-Doped ZnO Gates. Nanomaterials, 14(21), 1712.
        https://doi.org/10.3390/nano14211712