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Correction published on 6 June 2022, see Nanomaterials 2022, 12(11), 1935.

High Mobility Graphene on EVA/PET

Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96 Göteborg, Sweden
Faculty of Electronics, Photonics and Microsystems, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
Department of Industrial and Materials Science, Chalmers University of Technology, 412 96 Göteborg, Sweden
Author to whom correspondence should be addressed.
Academic Editors: Filippo Giannazzo and Ivan Shtepliuk
Nanomaterials 2022, 12(3), 331;
Received: 14 December 2021 / Revised: 16 January 2022 / Accepted: 17 January 2022 / Published: 21 January 2022 / Corrected: 6 June 2022
(This article belongs to the Topic Advances and Applications of 2D Materials)
Transparent conductive film on a plastic substrate is a critical component in low cost, flexible and lightweight optoelectronics. CVD graphene transferred from copper- to ethylene vinyl acetate (EVA)/polyethylene terephthalate (PET) foil by hot press lamination has been reported as a robust and affordable alternative to manufacture highly flexible and conductive films. Here, we demonstrate that annealing the samples at 60 C under a flow of nitrogen, after wet etching of copper foil by nitric acid, significantly enhances the Hall mobility of such graphene films. Raman, Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were used to evaluate the morphology and chemical composition of the graphene. View Full-Text
Keywords: graphene; CVD; flexible substrates graphene; CVD; flexible substrates
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MDPI and ACS Style

Khan, M.; Indykiewicz, K.; Tam, P.L.; Yurgens, A. High Mobility Graphene on EVA/PET. Nanomaterials 2022, 12, 331.

AMA Style

Khan M, Indykiewicz K, Tam PL, Yurgens A. High Mobility Graphene on EVA/PET. Nanomaterials. 2022; 12(3):331.

Chicago/Turabian Style

Khan, Munis, Kornelia Indykiewicz, Pui Lam Tam, and August Yurgens. 2022. "High Mobility Graphene on EVA/PET" Nanomaterials 12, no. 3: 331.

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