Review Reports
- Anastasiia V. Sokolova1,
- Ivan D. Skurlov1 and
- Anton A. Babaev1
- et al.
Reviewer 1: Anonymous Reviewer 2: Der-Yuh Lin
Round 1
Reviewer 1 Report
Comments for author File: 
Comments.pdf
Author Response
Dear Reviewer,
Please see the attachment.
Author Response File: Author Response.pdf
Reviewer 2 Report
The authors have presented a comprehensive study on the Pb-doped HgTe nanoplatelets including synthesis and characterization. Discussions are well organized and supported by the experimental data. Some minor revisions should be noted before acceptance for publication.
1. The figure 1 presented a schematic diagram of synthesis. The doping levels changed from 1 to 6 %, not 1/6 %. Please note the symbol.
2. The figure 5 presented a schematic diagram of photoluminescence. The notations of HgTe, HgTe 1% and HgTe 4% could be modified to indicate the Pb-doping levels, such as HgTe:Pb 1% and HgTe:Pb 4%.
3. In equation 1, the subscript (lin) of carrier mobility has not been addressed. Maybe the subscript is not necessary here.
4. The definition of photoconductive sensitivity S is given by (IL-ID)/IL, it would be not clear to see the enhancement by illumination. I suggest that authors can modify the definition of S and given by (IL-ID)/ID.
5. In table 1, the resistivity PD has not been described clearly. Please improve it.
6. In table 1, the value of hole mobility is very low (such as 7X10-7), please check it and make sure the measurements and calculation are all right. For example, using a standard device to check the whole procedure.
Author Response
Dear Reviewer,
Please see the attachment.
Author Response File: Author Response.pdf