Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping
, Anton A. Babaev 1, Peter S. Perfenov 1, Maksim A. Miropoltsev 1, Denis V. Danilov 2, Mikhail A. Baranov 1, Ilya E. Kolesnikov 2, Aleksandra V. Koroleva 2, Evgeniy V. Zhizhin 2, Aleksandr P. Litvin 1,3, Anatoly V. Fedorov 1 and Sergei A. Cherevkov 1,*Round 1
Reviewer 1 Report
Comments for author File: 
Comments.pdf
Author Response
Dear Reviewer,
Please see the attachment.
Author Response File: Author Response.pdf
Reviewer 2 Report
The authors have presented a comprehensive study on the Pb-doped HgTe nanoplatelets including synthesis and characterization. Discussions are well organized and supported by the experimental data. Some minor revisions should be noted before acceptance for publication.
1. The figure 1 presented a schematic diagram of synthesis. The doping levels changed from 1 to 6 %, not 1/6 %. Please note the symbol.
2. The figure 5 presented a schematic diagram of photoluminescence. The notations of HgTe, HgTe 1% and HgTe 4% could be modified to indicate the Pb-doping levels, such as HgTe:Pb 1% and HgTe:Pb 4%.
3. In equation 1, the subscript (lin) of carrier mobility has not been addressed. Maybe the subscript is not necessary here.
4. The definition of photoconductive sensitivity S is given by (IL-ID)/IL, it would be not clear to see the enhancement by illumination. I suggest that authors can modify the definition of S and given by (IL-ID)/ID.
5. In table 1, the resistivity PD has not been described clearly. Please improve it.
6. In table 1, the value of hole mobility is very low (such as 7X10-7), please check it and make sure the measurements and calculation are all right. For example, using a standard device to check the whole procedure.
Author Response
Dear Reviewer,
Please see the attachment.
Author Response File: Author Response.pdf
