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Zabrosaev IV, Kozodaev MG, Romanov RI, Chernikova AG, Mishra P, Doroshina NV, Arsenin AV, Volkov VS, Koroleva AA, Markeev AM. Field-Effect Transistor Based on 2D Microcrystalline MoS₂ Film Grown by Sulfurization of Atomically Layer Deposited MoO₃. Nanomaterials. 2022; 12(19):3262. https://doi.org/10.3390/nano12193262

Zabrosaev, Ivan V., Maxim G. Kozodaev, Roman I. Romanov, Anna G. Chernikova, Prabhash Mishra, Natalia V. Doroshina, Aleksey V. Arsenin, Valentyn S. Volkov, Alexandra A. Koroleva, and Andrey M. Markeev. 2022. "Field-Effect Transistor Based on 2D Microcrystalline MoS₂ Film Grown by Sulfurization of Atomically Layer Deposited MoO₃" Nanomaterials 12, no. 19: 3262. https://doi.org/10.3390/nano12193262

Zabrosaev, I. V., Kozodaev, M. G., Romanov, R. I., Chernikova, A. G., Mishra, P., Doroshina, N. V., Arsenin, A. V., Volkov, V. S., Koroleva, A. A., & Markeev, A. M. (2022). Field-Effect Transistor Based on 2D Microcrystalline MoS₂ Film Grown by Sulfurization of Atomically Layer Deposited MoO₃. Nanomaterials, 12(19), 3262. https://doi.org/10.3390/nano12193262