Dai, J.-J.; Mai, T.T.; Wu, S.-K.; Peng, J.-R.; Liu, C.-W.; Wen, H.-C.; Chou, W.-C.; Ho, H.-C.; Wang, W.-F.
High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT. Nanomaterials 2021, 11, 1766.
https://doi.org/10.3390/nano11071766
AMA Style
Dai J-J, Mai TT, Wu S-K, Peng J-R, Liu C-W, Wen H-C, Chou W-C, Ho H-C, Wang W-F.
High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT. Nanomaterials. 2021; 11(7):1766.
https://doi.org/10.3390/nano11071766
Chicago/Turabian Style
Dai, Jin-Ji, Thi Thu Mai, Ssu-Kuan Wu, Jing-Rong Peng, Cheng-Wei Liu, Hua-Chiang Wen, Wu-Ching Chou, Han-Chieh Ho, and Wei-Fan Wang.
2021. "High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT" Nanomaterials 11, no. 7: 1766.
https://doi.org/10.3390/nano11071766
APA Style
Dai, J.-J., Mai, T. T., Wu, S.-K., Peng, J.-R., Liu, C.-W., Wen, H.-C., Chou, W.-C., Ho, H.-C., & Wang, W.-F.
(2021). High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT. Nanomaterials, 11(7), 1766.
https://doi.org/10.3390/nano11071766