Lv, F.; Zhong, T.; Qin, Y.; Qin, H.; Wang, W.; Liu, F.; Kong, W.
Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device. Nanomaterials 2021, 11, 1361.
https://doi.org/10.3390/nano11061361
AMA Style
Lv F, Zhong T, Qin Y, Qin H, Wang W, Liu F, Kong W.
Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device. Nanomaterials. 2021; 11(6):1361.
https://doi.org/10.3390/nano11061361
Chicago/Turabian Style
Lv, Fengzhen, Tingting Zhong, Yongfu Qin, Haijun Qin, Wenfeng Wang, Fuchi Liu, and Wenjie Kong.
2021. "Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device" Nanomaterials 11, no. 6: 1361.
https://doi.org/10.3390/nano11061361
APA Style
Lv, F., Zhong, T., Qin, Y., Qin, H., Wang, W., Liu, F., & Kong, W.
(2021). Resistive Switching Characteristics Improved by Visible-Light Irradiation in a Cs2AgBiBr6-Based Memory Device. Nanomaterials, 11(6), 1361.
https://doi.org/10.3390/nano11061361