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Journal: NanomaterialsVolume: 10Number: 657
Article: Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics
- Authors:
- Yue Sun1,2,3,
- Xuanwu Kang2,* and
- Yingkui Zheng2
- et al.
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