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Journal: Nanomaterials, 2020
Volume: 10
Number: 657
657
Article: Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics
Authors: by Yue Sun, Xuanwu Kang, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu and Guoqi Zhang
Link: https://www.mdpi.com/2079-4991/10/4/657

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