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Journal: Nanomaterials, 2020
Volume: 10
Number: 657
Article:
Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics
Authors:
by
Yue Sun, Xuanwu Kang, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu and Guoqi Zhang
Link:
https://www.mdpi.com/2079-4991/10/4/657
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