Liu, W.-S.; Hsu, C.-H.; Jiang, Y.; Lai, Y.-C.; Kuo, H.-C.
Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing. Membranes 2022, 12, 49.
https://doi.org/10.3390/membranes12010049
AMA Style
Liu W-S, Hsu C-H, Jiang Y, Lai Y-C, Kuo H-C.
Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing. Membranes. 2022; 12(1):49.
https://doi.org/10.3390/membranes12010049
Chicago/Turabian Style
Liu, Wei-Sheng, Chih-Hao Hsu, Yu Jiang, Yi-Chun Lai, and Hsing-Chun Kuo.
2022. "Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing" Membranes 12, no. 1: 49.
https://doi.org/10.3390/membranes12010049
APA Style
Liu, W.-S., Hsu, C.-H., Jiang, Y., Lai, Y.-C., & Kuo, H.-C.
(2022). Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing. Membranes, 12(1), 49.
https://doi.org/10.3390/membranes12010049