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Journal: Applied SciencesVolume: 8Number: 1406
Article: Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain
  • Authors:
  • Hsin-Hui Hu1,*,
  • Yan-Wei Zeng1 and
  • Kun-Ming Chen2
Link: https://www.mdpi.com/2076-3417/8/8/1406

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