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Appl. Sci. 2018, 8(8), 1406; https://doi.org/10.3390/app8081406

Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain

1
Department of Electronic Engineering, National Taipei University of Technology, Taipei 106, Taiwan
2
National Nano Device Laboratories, Hsinchu 30078, Taiwan
*
Author to whom correspondence should be addressed.
Received: 23 June 2018 / Revised: 9 August 2018 / Accepted: 15 August 2018 / Published: 20 August 2018
(This article belongs to the Special Issue Selected Papers from the 2017 International Conference on Inventions)
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Abstract

Polycrystalline silicon (poly-Si) thin film transistors (TFT) with a tri-gate fin-like structure and wide drain were designed and simulated to improve gate-induced drain leakage (GIDL), ON-state current, and breakdown voltage. The GIDL of fin-like TFTs (FinTFTs) examined in this study was dominated by longitudinal band-to-band tunneling (L-BTBT). Extending the wide drain can effectively suppress the longitudinal electric field near the drain and improve L-BTBT GIDL and breakdown. In addition, a wider drain can lead to a large cross section in the current path and improve the ON-state current. FinTFTs with wide drain exhibit a low GIDL, a high ON-state current, and high breakdown voltage, while maintaining favorable gate controllability. View Full-Text
Keywords: thin-film transistor transistors; gate induced drain leakage (GIDL); Band-to-band tunneling (BTBT) thin-film transistor transistors; gate induced drain leakage (GIDL); Band-to-band tunneling (BTBT)
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Hu, H.-H.; Zeng, Y.-W.; Chen, K.-M. Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain. Appl. Sci. 2018, 8, 1406.

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