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New Reentrant Insulating Phases in Strongly Interacting 2D Systems with Low Disorder

1
Department of Physics, Case Western Reserve University, Cleveland, OH 44106, USA
2
Department of Radiation Oncology, Taussig Cancer Institute, Cleveland Clinic, Cleveland, OH 44195, USA
*
Author to whom correspondence should be addressed.
Appl. Sci. 2018, 8(10), 1909; https://doi.org/10.3390/app8101909
Received: 4 September 2018 / Revised: 21 September 2018 / Accepted: 27 September 2018 / Published: 14 October 2018
(This article belongs to the Special Issue Metal-Insulator Transitions)
The metal-insulator transition (MIT) in two-dimension (2D) was discovered by Kravchenko et al. more than two decades ago in strongly interacting 2D electrons residing in a Si-metal-oxide-semiconductor field-effect transistor (Si-MOSFET). Its origin remains unresolved. Recently, low magnetic field reentrant insulating phases (RIPs), which dwell between the zero-field (B = 0) metallic state and the integer quantum Hall (QH) states where the Landau-level filling factor υ > 1, have been observed in strongly correlated 2D GaAs hole systems with a large interaction parameter, rs, (~20–40) and a high purity. A new complex phase diagram was proposed, which includes zero-field MIT, low magnetic field RIPs, integer QH states, fractional QH states, high field RIPs and insulating phases (HFIPs) with υ < 1 in which the insulating phases are explained by the formation of a Wigner crystal. Furthermore, evidence of new intermediate phases was reported. This review article serves the purpose of summarizing those recent experimental findings and theoretical endeavors to foster future research efforts. View Full-Text
Keywords: metal-insulator transitions; electronic transport in interface structures; quantum Hall effects metal-insulator transitions; electronic transport in interface structures; quantum Hall effects
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MDPI and ACS Style

Qiu, R.L.J.; Liu, C.-W.; Liu, S.; Gao, X.P.A. New Reentrant Insulating Phases in Strongly Interacting 2D Systems with Low Disorder. Appl. Sci. 2018, 8, 1909.

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