Appl. Sci. 2017, 7(1), 21; https://doi.org/10.3390/app7010021
Numerical Simulation of Multi-Crystalline Silicon Crystal Growth Using a Macro–Micro Coupled Method during the Directional Solidification Process
Hebei Engineering Laboratory of Photoelectronic Functional Crystals, School of Materials Science and Engineering, Hebei University of Technology, 8 DingZiGu 1st Road, Tianjin 300130, China
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Academic Editors: Paolo Minzioni and Totaro Imasaka
Received: 30 September 2016 / Revised: 20 November 2016 / Accepted: 15 December 2016 / Published: 26 December 2016
(This article belongs to the Special Issue Silicon Photonics Components and Applications)
Abstract
In this work, the crystal growth of multi-crystalline silicon (mc-Si) during the directional solidification process was studied using the cellular automaton method. The boundary heat transfer coefficient was adjusted to get a suitable temperature field and a high-quality mc-Si ingot. Under the conditions of top adiabatic and bottom constant heat flux, the shape of the crystal-melt interface changes from concave to convex with the decrease of the heat transfer coefficient on the side boundaries. In addition, the nuclei form at the bottom boundary while columnar crystals develop into silicon melt with amzigzag-faceted interface. The higher-energy silicon grains were merged into lower energy ones. In the end, the number of silicon grains decreases with the increase of crystal length. View Full-TextKeywords:
silicon; crystal growth; computer simulation; directional solidification; cellular automaton method
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Lian, Q.; Liu, W.; Li, R.; Yan, W.; Liu, C.; Zhang, Y.; Wang, L.; Chen, H. Numerical Simulation of Multi-Crystalline Silicon Crystal Growth Using a Macro–Micro Coupled Method during the Directional Solidification Process. Appl. Sci. 2017, 7, 21.
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