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Applied Sciences
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  • Open Access

26 December 2023

Analysis of Electromagnetic Interference Effect on Semiconductor Scanning Electron Microscope Image Distortion

,
and
1
Department of Industrial Engineering and Management, National Taipei University of Technology, Taipei 10608, Taiwan
2
School of Computing and Augmented Intelligence, Arizona State University, Tempe, AZ 85287, USA
*
Author to whom correspondence should be addressed.
This article belongs to the Section Aerospace Science and Engineering

Abstract

Most electronic devices are susceptible to electromagnetic interference (EMI); thus, it is necessary to recognize and identify the cause and effect of EMI as it can corrupt electronic signals and degrade equipment performance. Particularly, in semiconductor manufacturing, the equipment used for image capturing is subject to various noises induced by EMI, causing the image analysis to be unreliable during the image recognition and digitization process. Thus, in this research, we aim to detect and quantify the influence of EMI on semiconductor SEM (scanning electron microscope) images. For this, we apply several useful denoising and edge detection techniques to find a clearer distorted shape from EMI-generated images and then compute five shape-related measures to evaluate the distortion. From a comprehensive experimental analysis and statistical tests, it is found that the medians of all the extracted shape-related measures of high-EMI SEM images are higher than those of both medium- and weak-EMI SEM images, and also all the p-values of the statistical tests are close to 0, and thus we can conclude that all the measures are good quantification metrics for assessing the impact of EMI on semiconductor SEM images.

1. Introduction

Image distortion caused by electromagnetic interference (EMI) that interferes with the performance of electrical equipment is a very critical problem in various precision research applications [1]. Particularly in semiconductor manufacturing, to detect and classify various defects on wafers, many automatic defect classification (ADC) methods have been developed [2,3]. In recent years, a variety of machine learning and deep learning techniques using SEM image data have been applied to defect detection and classification tasks in diverse areas, including semiconductor manufacturing [4,5,6,7,8,9,10,11,12,13,14,15,16,17]. Nakagaki et al. (2009) proposed a novel recognition technique for defect areas on semiconductor wafers using SEM images [18]. O’Leary et al. (2020) investigated a deep convolutional neural network (CNN) for defect classification using SEM images and energy-dispersive X-ray (EDX) spectroscopy data [7]. de la Rosa et al. (2021) presented a review of the defect detection and classification in semiconductor processes using machine learning and deep learning approaches combined with SEM images [13]. Liang et al. (2022) proposed an efficient method for processing the low-quality image data of integrated circuits to provide fundamental data for verification tasks [16]. Gómez-Sirvent et al. (2022) used the bag of visual words (BoVW) and Fisher vector (FV) coding methods for semiconductor wafer defect classification using SEM images [15]. Nam et al. (2022) proposed a generative adversarial network (GAN) that enables precise pattern alignment by transforming SEM images into target-like computer-aided design (CAD) images [17]. However, most previous research focused on defect detection and classification in semiconductor wafers but not on the identification and quantification of the distortion degree of EMI-contaminated SEM images. Thus, in this research, we consider several denoising and edge detection algorithms and then extract five measures (i.e., image object area, image object contour, rectangular area of the image object, extend index, and solidity index) to quantify the image distortion caused by EMI in semiconductor SEM images. To select the best denoising and edge detection techniques, we considered two evaluation metrics, that is, the mean squared error (MSE) for denoising and classification accuracy for edge detection techniques. The rest of this article is organized as follows. The literature reviews of EMI analysis, denoising algorithms, and edge detection algorithms are presented in Section 2. The details of the proposed approach and both experimental framework and analysis results are given in Section 3 and Section 4, respectively. Finally, the conclusions and some future research directions are discussed in Section 5.

3. Measures of Image Object

In this research, five measures are computed to characterize each image object: (i) image object area, (ii) image object contour, (iii) rectangular area of the image object, (iv) extend index, and (v) solidity index. Figure 1 illustrates the contour area, the rectangular area, and the convex hull area of an example image. The extend measure is the ratio of the contour area of an image object to the area of a rectangle circumscribing the contour of the image object (i.e., bounding rectangle area), while the solidity measure is the ratio of the contour area of the image object to the convex hull area of the contour of the image object. Here, the convex hull refers to the convex surface surrounding the image object.
Figure 1. Contour area, rectangular area, and convex hull area.
In image processing, after extracting the contour surrounding an image object, the area of the image object can be derived by using the spatial moment function as follows:
ψ p q = φ x φ y φ x p φ y q Θ l φ x , φ y
where φ x and φ y indicate the column and row coordinates of a pixel in the contour set (i.e., boundary pixel set) Θ l , respectively. In this research, since it is not necessary to check all the individual pixel values or to consider every coordinate position (that is, it is not necessary to consider the positional influence), the area of a binary image object can be obtained from the 0 t h moment of the raw spatial moment function. Thus, the area of a binary image extracted from this research corresponds to the sum of the non-zero pixels, i.e., ψ 00 = φ x φ y Θ l φ x , φ y .

4. Experimental Analysis

In this research, four denoising and twelve edge detection techniques are iteratively applied to determine the influence of EMI on the SEM image by extracting the exact image objects and the corresponding various indices. Particularly, after applying these techniques, dilation processing is also adopted to visualize the image object with better clarity. In the denoising step, all four denoising algorithms, i.e., Gaussian filter, median filter, bilateral filter, and non-local mean filter, are applied. The mean squared error (MSE) is used to evaluate the noise reduction effect, and the classification error rate δ is a user-defined parameter with a range from 0.8 to 0.9. The edge detection parameters are the lower and upper thresholds considered in the Canny edge filter. Figure 2 illustrates the detailed procedures of the proposed method. Here, M S E i N R ( k ) , A C C j E D ( l ) , ε , and δ indicate the mean squared error of the k th denoising technique at the i th iteration, the classification accuracy of the l th edge detection technique at the j th iteration, the threshold value for the mean squared error, and the threshold value for the accuracy, respectively.
Figure 2. Flowchart of image object extraction and quantification process.
The experimental results presented in Figure 3 show that the Gaussian filter is selected as the best denoising technique in the first denoising step since it provides the minimum mean squared error compared to other denoising techniques.
Figure 3. Results of the 1st denoising.
Then, twelve different edge detection filters are applied to the images refined by the Gaussian filter at the first denoising stage. As shown in Figure 4, the Scharr x filter is selected as the best edge detection technique in the first edge detection process since it provides the maximum classification performance.
Figure 4. Results of the 1st edge detection.
As the second denoising method, the Gaussian filter and a non-local mean filter are sequentially applied to the image obtained from the previous step. Then, the Canny edge filter is applied to the image derived from the previous step. Through the iterative application of the denoising and edge detection algorithm selected, it is shown that all edges reflecting the image object deformation are effectively detected. The proposed analysis procedure is tested on 3 different types of 119 semiconductor SEM images, i.e., high-EMI, medium-EMI, and weak-EMI, and 5 distortion measures are extracted from each image, i.e., image object area (denoted by ‘Area’), image object contour (denoted by ‘Perimeter’), rectangular area of the image object (denoted by ‘Rectangular’), extend index (denoted by ‘Extend’), and solidity index (denoted by ‘Solidity’). Here, high-EMI, medium-EMI, and weak-EMI indicate SEM images affected heavily, moderately, and rarely by EMI, respectively. Figure 5 shows the box plots of five measures for three different types of semiconductor SEM images. The x-axis and y-axis in Figure 5 represent three different types of SEM images according to the level of EMI introduced and distortion measures, respectively. As shown in this figure, the medians of all five measures of high-EMI SEM images are higher than those of both medium- and weak-EMI SEM images, and the medians of all five measures of medium-EMI SEM images are higher than those of weak-EMI SEM images.
Figure 5. Comparison of EMI-generated SEM images.
Since the response variable is a categorical (i.e., nominal) variable and independent variables are numeric (i.e., continuous) variables, a multinomial logistic regression is used to model the nominal response variables and predict the probabilities of the different possible responses. The following Table 1 shows the parameter estimation results of multinomial logistic regression analysis of two models, that is, medium-EMI (denoted by ‘Class = 2’) relative to weak-EMI (denoted by ‘Class = 1’) and high-EMI (denoted by ‘Class = 3’) relative to weak-EMI (denoted by ‘Class = 1’), that is, weak-EMI is the base response.
Table 1. Results of multinomial logistic regression analysis.
Several different types of goodness-of-fit measures have been developed since the conventional R 2 cannot be applied to assess goodness of fit in logistic regression analysis. One of the popular goodness-of-fit measures in logistic regression analysis is McFadden’s pseudo- R -squared statistic based on the ratio of the log-likelihood functions as follows:
R 2 = 1 l n ( L M ) l n ( L 0 )
where L M and L 0 are the maximum log-likelihood functions for the full model and the intercept-only model (also called the null model), respectively. From the analysis results, it is found that McFadden’s pseudo- R -squared value of the fitted model is 0.245, and thus, we may conclude that the regression model fits the data moderately well since McFadden’s pseudo- R -squared value ranges from 0.2 to 0.4, which indicates a very good model fit [45]. And, to test whether all the regression coefficients of predictors in the fitted logistic regression model are simultaneously zero or not (i.e., H 0 :   β = 0 vs. H 1 :   β 0 ), the following log-likelihood ratio (i.e., LLR) statistic can be used:
L L R = 2 l n L M L 0
The LLR p -value for testing the fitted full model ( L M ) versus the intercept-only model ( L 0 ) is 5.800 e × 10 10 , and thus, we can conclude that the model fits the data better than the intercept-only model since the LLR p -value is less than the significance level of α = 0.05 , that is, including all the measures as predictors significantly improves the model fit compared to the intercept-only model. Finally, all the estimates of regression coefficients of both ‘Logit 1’ and ‘Logit 2’ models are statistically significant at the significance level of 0.05. The estimated logistic models of the two classes are
l n P C l a s s = 2 P C l a s s = 1 = 49.089 119.993 × A r e a + 117.116 × P e r i m e t e r + 16.981 × R e c t a n g l e + 99.605 × E x t e n d 23.303 × S o l i d i t y
l n P C l a s s = 3 P C l a s s = 1 = 42.351 102.472 × A r e a + 97.804 × P e r i m e t e r + 21.816 × R e c t a n g l e + 96.730 × E x t e n d 28.523 × S o l i d i t y
For example, the coefficient of ‘Extend’ is 99.605 in the ‘Logit 1’ model. This indicates that an increase in the ‘Extend’ by one unit will result in an increase of 99.605 units in the log of the ratio between the probability of being a medium EMI versus the probability of being a weak EMI. Finally, to evaluate whether all of these measures are statistically significant in detecting the EMI effect on semiconductor SEM images, a multivariate analysis of variance (MANOVA) is executed, which is useful for testing whether the vectors of means for more than two groups are different or not. Specifically, to compare the difference in the means of all five measures for the type of semiconductor SEM images (i.e., high-EMI, medium-EMI, and weak-EMI image groups), the four most common statistics, i.e., Wilks’ Lambda, Pillai’s trace, Hotelling–Lawely trace, and Roy’s largest root, are considered. The Wilks’ Lambda statistic is as follows:
Wilks   Lambda :   Λ = W W + B
where W and B are the determinants of the within-group sum of squares and the between-group sum of squares, respectively. This test statistic ranges from 0 to 1, and the smaller values indicate larger variability between vectors of means. The Pillai’s trace, Hotelling–Lawely trace, and Roy’s largest root statistics are as follows:
Pillai s   trace :   V = t r a c e B B + W 1
Hotelling Lawely   trace :   T = t r a c e B W 1
Roy s   largest   root :   Λ = maximum   eigenvalue   of   W B + W 1
The Pillai’s trace value also ranges from 0 to 1, but compared to Wilks’ Lambda, the larger values of the Pillai’s trace, Hotelling–Lawely trace, and Roy’s largest root statistics indicate larger variability between vectors of means [46]. Table 2 shows the result of MANOVA.
Table 2. Results of multivariate analysis of variance (MANOVA).
For example, Pillai’s trace value is 0.429, and the corresponding F-value is F 10,226 = 6.169 (i.e., p-value < 0.001). Since all the p-values of the test statistics are close to 0, the null hypothesis H 0 : M H = M M = M W can be rejected at the significance level of 0.05 where M H , M M , and M W indicate the mean vectors of five measures for three different types of semiconductor SEM images, i.e., high-EMI, medium-EMI, and weak-EMI SEM images, respectively. Therefore, we can conclude that all the extracted shape-related measures are good quantification metrics for assessing the impact of EMI on semiconductor SEM images.

5. Conclusions

Electromagnetic interference (EMI) is one of the crucial problems in semiconductor image analysis. Thus, in this research, four different types of denoising algorithms and twelve different edge detection algorithms are considered to investigate the influence of the EMI on the semiconductor SEM image analysis. From the experimental analysis, it is found that the Gaussian filter for denoising and both the Scharr × filter and the Canny filter for edge detection are the best for characterizing distorted image objects. Additionally, from the statistical analysis, all the measures (i.e., image object area, image object contour, rectangular area of the image object, extend index, and solidity index) are very effective in describing the degree of distortion in semiconductor SEM images caused by EMI since the medians of all the extracted shape-related measures of high-EMI SEM images are higher than those of both medium- and weak-EMI SEM images and all the p-values of the test statistics are close to 0. As for future work, more accurate indices for calibrating the degree of distortion in semiconductor SEM images and the performance of other denoising and edge detection algorithms can be investigated. It is necessary to develop an automatic classification and analysis system for the EMI-generated semiconductor SEM images, including the EMI effect extraction function and yield analysis function.

Author Contributions

Y.-J.P.: conceptualization, investigation, data curation, experiment, writing—original draft, and writing—review and editing. R.P.: conceptualization, methodology, writing—original draft, and writing—review and editing. D.C.M.: conceptualization, methodology, supervision, and writing—review and editing. All authors have read and agreed to the published version of the manuscript.

Funding

This research was funded by the Ministry of Science and Technology of Taiwan, grant number 110-2221-E-027-106-MY3.

Data Availability Statement

The data presented in this study are available on request from the corresponding author. The data are not publicly available as it contains confidential information.

Conflicts of Interest

The authors declare no conflicts of interest.

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