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Journal: Appl. Sci., 2023
Volume: 13
Number: 427

Article: Analysis of Ruggedness of 4H-SiC Power MOSFETs with Various Doping Parameters
Authors: by Min-Seok Jang, Jee-Hun Jeong and Ho-Jun Lee
Link: https://www.mdpi.com/2076-3417/13/1/427

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