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Journal: Applied SciencesVolume: 13Number: 427
Article: Analysis of Ruggedness of 4H-SiC Power MOSFETs with Various Doping Parameters
  • Authors:
  • Min-Seok Jang,
  • Jee-Hun Jeong and
  • Ho-Jun Lee*
Link: https://www.mdpi.com/2076-3417/13/1/427

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