Lee, G.-H.; Cuong, T.-V.; Yeo, D.-K.; Cho, H.; Ryu, B.-D.; Kim, E.-M.; Nam, T.-S.; Suh, E.-K.; Seo, T.-H.; Hong, C.-H.
Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes. Appl. Sci. 2021, 11, 9321.
https://doi.org/10.3390/app11199321
AMA Style
Lee G-H, Cuong T-V, Yeo D-K, Cho H, Ryu B-D, Kim E-M, Nam T-S, Suh E-K, Seo T-H, Hong C-H.
Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes. Applied Sciences. 2021; 11(19):9321.
https://doi.org/10.3390/app11199321
Chicago/Turabian Style
Lee, Gun-Hee, Tran-Viet Cuong, Dong-Kyu Yeo, Hyunjin Cho, Beo-Deul Ryu, Eun-Mi Kim, Tae-Sik Nam, Eun-Kyung Suh, Tae-Hoon Seo, and Chang-Hee Hong.
2021. "Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes" Applied Sciences 11, no. 19: 9321.
https://doi.org/10.3390/app11199321
APA Style
Lee, G.-H., Cuong, T.-V., Yeo, D.-K., Cho, H., Ryu, B.-D., Kim, E.-M., Nam, T.-S., Suh, E.-K., Seo, T.-H., & Hong, C.-H.
(2021). Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes. Applied Sciences, 11(19), 9321.
https://doi.org/10.3390/app11199321