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Atamuratov AE, Khalilloev MM, Yusupov A, García-Loureiro AJ, Chedjou JC, Kyandoghere K. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET. Applied Sciences. 2020; 10(15):5327. https://doi.org/10.3390/app10155327

Atamuratov, Atabek E., Mahkam M. Khalilloev, Ahmed Yusupov, A. J. García-Loureiro, Jean Chamberlain Chedjou, and Kyamakya Kyandoghere. 2020. "Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET" Applied Sciences 10, no. 15: 5327. https://doi.org/10.3390/app10155327

Atamuratov, A. E., Khalilloev, M. M., Yusupov, A., García-Loureiro, A. J., Chedjou, J. C., & Kyandoghere, K. (2020). Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET. Applied Sciences, 10(15), 5327. https://doi.org/10.3390/app10155327