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Volatile Resistive Switching Characteristics of Pt/HfO2/TaOx/TiN Short-Term Memory Device
 
 

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Journal: Metals, 2021
Volume: 11
Number: 1885

Article: Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device
Authors: by Hojeong Ryu, Hoeje Jung, Kisong Lee and Sungjun Kim
Link: https://www.mdpi.com/2075-4701/11/12/1885

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