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Volatile Resistive Switching Characteristics of Pt/HfO2/TaOx/TiN Short-Term Memory Device
 
 
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Volume 11
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Article

Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device

by
Hojeong Ryu
1,
Hoeje Jung
1,
Kisong Lee
2 and
Sungjun Kim
1,*
1
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea
2
Department of Information and Communication Engineering, Dongguk University, Seoul 04620, Korea
*
Author to whom correspondence should be addressed.
Metals 2021, 11(12), 1885; https://doi.org/10.3390/met11121885
Submission received: 8 October 2021 / Revised: 26 October 2021 / Accepted: 16 November 2021 / Published: 23 November 2021
(This article belongs to the Special Issue Machine Learning Methods and Sustainable Development: Metal Oxides and Multilayer Metal-Oxides)
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Abstract

This work characterizes resistive switching and neuromorphic simulation of Pt/HfO2/TaN stack as an artificial synaptic device. A stable bipolar resistive switching operation is performed by repetitive DC sweep cycles. Furthermore, endurance (DC 100 cycles) and retention (5000 s) are demonstrated for reliable resistive operation. Low-resistance and high-resistance states follow the Ohmic conduction and Poole–Frenkel emission, respectively, which is verified through the fitting process. For practical operation, the set and reset processes are performed through pulses. Further, potentiation and depression are demonstrated for neuromorphic application. Finally, neuromorphic system simulation is performed through a neural network for pattern recognition accuracy of the Fashion Modified National Institute of Standards and Technology dataset.
Keywords: memristor; threshold switching; resistive switching; metal oxides memristor; threshold switching; resistive switching; metal oxides

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MDPI and ACS Style

Ryu, H.; Jung, H.; Lee, K.; Kim, S. Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device. Metals 2021, 11, 1885. https://doi.org/10.3390/met11121885

AMA Style

Ryu H, Jung H, Lee K, Kim S. Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device. Metals. 2021; 11(12):1885. https://doi.org/10.3390/met11121885

Chicago/Turabian Style

Ryu, Hojeong, Hoeje Jung, Kisong Lee, and Sungjun Kim. 2021. "Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device" Metals 11, no. 12: 1885. https://doi.org/10.3390/met11121885

APA Style

Ryu, H., Jung, H., Lee, K., & Kim, S. (2021). Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device. Metals, 11(12), 1885. https://doi.org/10.3390/met11121885

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