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Journal: CrystalsVolume: 8Number: 258
Article: Manipulation of Si Doping Concentration for Modification of the Electric Field and Carrier Injection for AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
- Authors:
- Mengqian Fang1,2,
- Kangkai Tian1,2 and
- Chunshuang Chu1,2
- et al.
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