Ide, T.;                     Harada, H.;                     Miyamura, Y.;                     Imai, M.;                     Nakano, S.;                     Kakimoto, K.    
        Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification. Crystals 2018, 8, 244.
    https://doi.org/10.3390/cryst8060244
    AMA Style
    
                                Ide T,                                 Harada H,                                 Miyamura Y,                                 Imai M,                                 Nakano S,                                 Kakimoto K.        
                Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification. Crystals. 2018; 8(6):244.
        https://doi.org/10.3390/cryst8060244
    
    Chicago/Turabian Style
    
                                Ide, Tomoro,                                 Hirofumi Harada,                                 Yoshiji Miyamura,                                 Masato Imai,                                 Satoshi Nakano,                                 and Koichi Kakimoto.        
                2018. "Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification" Crystals 8, no. 6: 244.
        https://doi.org/10.3390/cryst8060244
    
    APA Style
    
                                Ide, T.,                                 Harada, H.,                                 Miyamura, Y.,                                 Imai, M.,                                 Nakano, S.,                                 & Kakimoto, K.        
        
        (2018). Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification. Crystals, 8(6), 244.
        https://doi.org/10.3390/cryst8060244