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Crystals 2018, 8(1), 36;

Modeling and Analysis of Novel Horizontal Ribbon Growth of Silicon Crystal

School of Mechanical Engineering, Jiangsu Collaborative Innovation Center for Photovoltaic Science and Engineering, Jiangsu Province Cultivation base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou 213164, China
Micro/Nano Science and Technology Center, Jiangsu University, Zhenjiang 212013, China
Authors to whom correspondence should be addressed.
Received: 7 December 2017 / Revised: 30 December 2017 / Accepted: 9 January 2018 / Published: 16 January 2018
(This article belongs to the Special Issue Crystal Growth for Optoelectronic and Piezoelectric Applications)
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We present a novel horizontal ribbon growth (HRG) process and a theoretical analysis of this method. Assuming that the existence of the meniscus is defined by diffuse growth, we determine analytically the thickness and height of the meniscus and an explicit expression for the performance of meniscus under different conditions. We then calculate the thermal profile in melt part, as well as the conditions under which the undercooling is sufficient around the solidification point. We find that diffuse growth is more sensitive to small initial thickness, and find the minimum length of the melt part to obtain undercooling. Finally, we calculate the change rule of solidification position by a variational approach, as well as the stability of the process under different conditions. We also give an expression to the instability of past HRG methods. View Full-Text
Keywords: crystal growth; stability; mathematic model; heat transfer crystal growth; stability; mathematic model; heat transfer

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Xu, J.; Shen, D.; Sun, T.; Ding, J.; Yuan, N. Modeling and Analysis of Novel Horizontal Ribbon Growth of Silicon Crystal. Crystals 2018, 8, 36.

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