Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene
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Institut de Microélectronique Electromagnétisme et Photonique et le LAboratoire d'Hyperfréquenceset de Caractérisation, IMEP-LAHC (UMR CNRS/INPG/UJF 5130), Grenoble INP Minatec, 3, ParvisLouis Nèel, BP 257, Grenoble F-38016, France
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Catalan Institute of Nanotechnology (CIN2), Universitat Autónoma de Barcelona, Campus UAB,Bellaterra 08193, Spain
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Ecole Normale Superieure de Lyon, 46, Allée d'Italie, Lyon 69007, France
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Institute of Physics, Technical University of Lodz, ul. Wolczanska 219, Lodz 93-005, Poland
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Barcelona Supercomputing Center (BSC), C/Jordi Girona 29, Barcelona E-08034, Spain
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Institució Catalana de Recerca i Estudis Avanc¸ats (ICREA), Barcelona 08070, Spain
*
Authors to whom correspondence should be addressed.
Crystals 2013, 3(2), 289-305; https://doi.org/10.3390/cryst3020289
Received: 7 March 2013
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Accepted: 1 April 2013
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Published: 8 April 2013
(This article belongs to the Special Issue Graphenes)
We present a survey of the effect of vacancies on quantum transport in graphene, exploring conduction regimes ranging from tunnelling to intrinsic transport phenomena. Vacancies, with density up to 2%, are distributed at random either in a balanced manner between the two sublattices or in a totally unbalanced configuration where only atoms sitting on a given sublattice are randomly removed. Quantum transmission shows a variety of different behaviours, which depend on the specific system geometry and disorder distribution. The investigation of the scaling laws of the most significant quantities allows a deep physical insight and the accurate prediction of their trend over a large energy region around the Dirac point.
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Keywords:
graphene; vacancies; quantum transport
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MDPI and ACS Style
Cresti, A.; Louvet, T.; Ortmann, F.; Van Tuan, D.; Lenarczyk, P.; Huhs, G.; Roche, S. Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene. Crystals 2013, 3, 289-305. https://doi.org/10.3390/cryst3020289
AMA Style
Cresti A, Louvet T, Ortmann F, Van Tuan D, Lenarczyk P, Huhs G, Roche S. Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene. Crystals. 2013; 3(2):289-305. https://doi.org/10.3390/cryst3020289
Chicago/Turabian StyleCresti, Alessandro, Thibaud Louvet, Frank Ortmann, Dinh Van Tuan, Paweł Lenarczyk, Georg Huhs, and Stephan Roche. 2013. "Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene" Crystals 3, no. 2: 289-305. https://doi.org/10.3390/cryst3020289
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