Krenckel, P.; Hayama, Y.; Schindler, F.; Trötschler, T.; Riepe, S.; Usami, N.
Propagation of Crystal Defects during Directional Solidification of Silicon via Induction of Functional Defects. Crystals 2021, 11, 90.
https://doi.org/10.3390/cryst11020090
AMA Style
Krenckel P, Hayama Y, Schindler F, Trötschler T, Riepe S, Usami N.
Propagation of Crystal Defects during Directional Solidification of Silicon via Induction of Functional Defects. Crystals. 2021; 11(2):90.
https://doi.org/10.3390/cryst11020090
Chicago/Turabian Style
Krenckel, Patricia, Yusuke Hayama, Florian Schindler, Theresa Trötschler, Stephan Riepe, and Noritaka Usami.
2021. "Propagation of Crystal Defects during Directional Solidification of Silicon via Induction of Functional Defects" Crystals 11, no. 2: 90.
https://doi.org/10.3390/cryst11020090
APA Style
Krenckel, P., Hayama, Y., Schindler, F., Trötschler, T., Riepe, S., & Usami, N.
(2021). Propagation of Crystal Defects during Directional Solidification of Silicon via Induction of Functional Defects. Crystals, 11(2), 90.
https://doi.org/10.3390/cryst11020090