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Journal: Crystals, 2020
Volume: 10
Number: 555
555
Article: X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation
Authors: by Hadjer Ouaddah, Maike Becker, Thècle Riberi-Béridot, Maria Tsoutsouva, Vasiliki Stamelou, Gabrielle Regula, Guillaume Reinhart, Isabelle Périchaud, Fabrice Guittonneau, Laurent Barrallier, Jean-Paul Valade, Alexander Rack, Elodie Boller, José Baruchel and Nathalie Mangelinck-Noël
Link: https://www.mdpi.com/2073-4352/10/7/555

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