X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation
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Ouaddah, H.; Becker, M.; Riberi-Béridot, T.; Tsoutsouva, M.; Stamelou, V.; Regula, G.; Reinhart, G.; Périchaud, I.; Guittonneau, F.; Barrallier, L.; Valade, J.-P.; Rack, A.; Boller, E.; Baruchel, J.; Mangelinck-Noël, N. X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation. Crystals 2020, 10, 555. https://doi.org/10.3390/cryst10070555
Ouaddah H, Becker M, Riberi-Béridot T, Tsoutsouva M, Stamelou V, Regula G, Reinhart G, Périchaud I, Guittonneau F, Barrallier L, Valade J-P, Rack A, Boller E, Baruchel J, Mangelinck-Noël N. X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation. Crystals. 2020; 10(7):555. https://doi.org/10.3390/cryst10070555
Chicago/Turabian StyleOuaddah, Hadjer, Maike Becker, Thècle Riberi-Béridot, Maria Tsoutsouva, Vasiliki Stamelou, Gabrielle Regula, Guillaume Reinhart, Isabelle Périchaud, Fabrice Guittonneau, Laurent Barrallier, Jean-Paul Valade, Alexander Rack, Elodie Boller, José Baruchel, and Nathalie Mangelinck-Noël. 2020. "X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics—Application to Grain and Defect Formation" Crystals 10, no. 7: 555. https://doi.org/10.3390/cryst10070555