Wang, L.; Takehara, Y.; Sekimoto, A.; Okano, Y.; Ujihara, T.; Dost, S.
Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field. Crystals 2020, 10, 111.
https://doi.org/10.3390/cryst10020111
AMA Style
Wang L, Takehara Y, Sekimoto A, Okano Y, Ujihara T, Dost S.
Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field. Crystals. 2020; 10(2):111.
https://doi.org/10.3390/cryst10020111
Chicago/Turabian Style
Wang, Lei, Yuto Takehara, Atsushi Sekimoto, Yasunori Okano, Toru Ujihara, and Sadik Dost.
2020. "Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field" Crystals 10, no. 2: 111.
https://doi.org/10.3390/cryst10020111
APA Style
Wang, L., Takehara, Y., Sekimoto, A., Okano, Y., Ujihara, T., & Dost, S.
(2020). Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field. Crystals, 10(2), 111.
https://doi.org/10.3390/cryst10020111