Elahifard, M.; Sadrian, M.R.; Mirzanejad, A.; Behjatmanesh-Ardakani, R.; Ahmadvand, S.
Dispersion of Defects in TiO2 Semiconductor: Oxygen Vacancies in the Bulk and Surface of Rutile and Anatase. Catalysts 2020, 10, 397.
https://doi.org/10.3390/catal10040397
AMA Style
Elahifard M, Sadrian MR, Mirzanejad A, Behjatmanesh-Ardakani R, Ahmadvand S.
Dispersion of Defects in TiO2 Semiconductor: Oxygen Vacancies in the Bulk and Surface of Rutile and Anatase. Catalysts. 2020; 10(4):397.
https://doi.org/10.3390/catal10040397
Chicago/Turabian Style
Elahifard, Mohammadreza, Mohammad Reza Sadrian, Amir Mirzanejad, Reza Behjatmanesh-Ardakani, and Seyedsaeid Ahmadvand.
2020. "Dispersion of Defects in TiO2 Semiconductor: Oxygen Vacancies in the Bulk and Surface of Rutile and Anatase" Catalysts 10, no. 4: 397.
https://doi.org/10.3390/catal10040397
APA Style
Elahifard, M., Sadrian, M. R., Mirzanejad, A., Behjatmanesh-Ardakani, R., & Ahmadvand, S.
(2020). Dispersion of Defects in TiO2 Semiconductor: Oxygen Vacancies in the Bulk and Surface of Rutile and Anatase. Catalysts, 10(4), 397.
https://doi.org/10.3390/catal10040397