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Journal: MicromachinesVolume: 13Number: 1579
Article: Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser
  • Authors:
  • Yong Du1,*,
  • Wenqi Wei2 and
  • Buqing Xu1
  • et al.
Link: https://www.mdpi.com/2072-666X/13/10/1579

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