Next Article in Journal
Enhancement of Virus Infection Using Dynamic Cell Culture in a Microchannel
Next Article in Special Issue
Design and Analysis of the Elastic-Beam Delaying Mechanism in a Micro-Electro-Mechanical Systems Device
Previous Article in Journal
Amorphous Silicon Carbide Platform for Next Generation Penetrating Neural Interface Designs
Previous Article in Special Issue
LSS-RM: Using Multi-Mounted Devices to Construct a Lightweight Site-Survey Radio Map for WiFi Positioning
Article Menu
Issue 10 (October) cover image

Export Article

Open AccessArticle

A Novel, Hybrid-Integrated, High-Precision, Vacuum Microelectronic Accelerometer with Nano-Field Emission Tips

1
School of Microelectronics and Communication Engineering of Chongqing University, Chongqing 400044, China
2
Chongqing acoustic optoelectronic Co. Ltd. of China Electronics Technology Group Corporation, Chongqing 400060, China
3
National Key Discipline Laboratory of Novel Micro/Nano Devices and Systems Technologies, Chongqing University, Chongqing 400044, China
*
Authors to whom correspondence should be addressed.
Micromachines 2018, 9(10), 481; https://doi.org/10.3390/mi9100481
Received: 27 July 2018 / Revised: 6 September 2018 / Accepted: 16 September 2018 / Published: 20 September 2018
(This article belongs to the Special Issue MEMS Accelerometers)
  |  
PDF [7023 KB, uploaded 20 September 2018]
  |  

Abstract

In this paper, a novel, hybrid-integrated, high-precision, vacuum microelectronic accelerometer is put forward, based on the theory of field emission; the accelerometer consists of a sensitive structure and an ASIC interface (application-specific integrated circuit). The sensitive structure has a cathode cone tip array, a folded beam, an emitter electrode, and a feedback electrode. The sensor is fabricated on a double-sided polished (1 0 0) N-type silicon wafer; the tip array of the cathode is shaped by wet etching with HNA (HNO3, HF, and CH3COOH) and metalized by TiW/Au thin film. The structure of the sensor is finally released by the ICP (inductively coupled plasma) process. The ASIC interface was designed and fabricated based on the P-JFET (Positive-Junction Field Effect Transistor) high-voltage bipolar process. The accelerometer was tested through a static field rollover test, and the test results show that the hybrid-integrated vacuum microelectronic accelerometer has good performance, with a sensitivity of 3.081 V/g, the non-linearity is 0.84% in the measuring range of −1 g~1 g, the average noise spectrum density value is 36.7 μV/ Hz in the frequency range of 0–200 Hz, the resolution of the vacuum microelectronic accelerometer can reach 1.1 × 10−5 g, and the zero stability reaches 0.18 mg in 24 h. View Full-Text
Keywords: field emission; hybrid integrated; vacuum microelectronic; cathode tips array; interface ASIC field emission; hybrid integrated; vacuum microelectronic; cathode tips array; interface ASIC
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed
Printed Edition Available!
A printed edition of this Special Issue is available here.

Share & Cite This Article

MDPI and ACS Style

Liu, H.; Wei, K.; Li, Z.; Huang, W.; Xu, Y.; Cui, W. A Novel, Hybrid-Integrated, High-Precision, Vacuum Microelectronic Accelerometer with Nano-Field Emission Tips. Micromachines 2018, 9, 481.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Micromachines EISSN 2072-666X Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top