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Volume 16
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Article

Post-Bonding Crack-Induced Di-Cantilever Bending (PBC-DCB): A Novel Method for Quantitative Evaluation of Bonding Strength for Wafer-to-Wafer and Die-to-Wafer Hybrid Bonding

by
Tianze Zheng
1,†,
Yuan Xu
1,†,
Cong Mei
1,
Yingjie Chen
1,
Liu Chang
1,
Gangli Yang
1,
Qiuhan Hu
2,
Tailong Shi
1,
Yuan Yuan
3,
Zongguang Yu
3 and
Liyi Li
1,*
1
School of Integrated Circuits, Southeast University, Wuxi 214000, China
2
School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China
3
The 58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214000, China
*
Author to whom correspondence should be addressed.
†
These authors contributed to the work equally and should be regarded as co-first authors.
Micromachines 2025, 16(12), 1304; https://doi.org/10.3390/mi16121304
Submission received: 23 October 2025 / Revised: 17 November 2025 / Accepted: 19 November 2025 / Published: 21 November 2025
(This article belongs to the Special Issue Advanced Interconnect and Packaging, 3rd Edition)
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Abstract

To address the challenge of characterizing bonding strength in hybrid bonding, this paper proposes a method based on post-bonding crack-induced di-cantilever bending (PBC-DCB). The commonly used industrial blade insertion (BI) method only measures the edge strength of wafer-to-wafer samples via bevel geometry, failing to characterize the wafer center or die-to-wafer samples (as they lack a bevel) and exhibiting limited accuracy due to irregular crack edges. This study develops a di-cantilever beam test initiated by a specially prepared post-bonding notch. By deriving the relationship between load–displacement and bonding strength based on fracture mechanics and optimizing sample preparation and testing parameters, quantitative measurement of interface fracture strength is achieved. Experimental results show the method has a deviation < 5% from BI with better repeatability, verifying its reliability. It successfully distinguishes bonding strength between wafer center and edge and reveals that SiCN dielectric layers have 17.34% higher strength and better uniformity than SiO2. This provides a reliable testing tool for hybrid bonding quality and process optimization, with broad prospects in industrial production and scientific research.
Keywords: hybrid bonding; bonding strength; fracture mechanics; di-cantilever bending hybrid bonding; bonding strength; fracture mechanics; di-cantilever bending

Share and Cite

MDPI and ACS Style

Zheng, T.; Xu, Y.; Mei, C.; Chen, Y.; Chang, L.; Yang, G.; Hu, Q.; Shi, T.; Yuan, Y.; Yu, Z.; et al. Post-Bonding Crack-Induced Di-Cantilever Bending (PBC-DCB): A Novel Method for Quantitative Evaluation of Bonding Strength for Wafer-to-Wafer and Die-to-Wafer Hybrid Bonding. Micromachines 2025, 16, 1304. https://doi.org/10.3390/mi16121304

AMA Style

Zheng T, Xu Y, Mei C, Chen Y, Chang L, Yang G, Hu Q, Shi T, Yuan Y, Yu Z, et al. Post-Bonding Crack-Induced Di-Cantilever Bending (PBC-DCB): A Novel Method for Quantitative Evaluation of Bonding Strength for Wafer-to-Wafer and Die-to-Wafer Hybrid Bonding. Micromachines. 2025; 16(12):1304. https://doi.org/10.3390/mi16121304

Chicago/Turabian Style

Zheng, Tianze, Yuan Xu, Cong Mei, Yingjie Chen, Liu Chang, Gangli Yang, Qiuhan Hu, Tailong Shi, Yuan Yuan, Zongguang Yu, and et al. 2025. "Post-Bonding Crack-Induced Di-Cantilever Bending (PBC-DCB): A Novel Method for Quantitative Evaluation of Bonding Strength for Wafer-to-Wafer and Die-to-Wafer Hybrid Bonding" Micromachines 16, no. 12: 1304. https://doi.org/10.3390/mi16121304

APA Style

Zheng, T., Xu, Y., Mei, C., Chen, Y., Chang, L., Yang, G., Hu, Q., Shi, T., Yuan, Y., Yu, Z., & Li, L. (2025). Post-Bonding Crack-Induced Di-Cantilever Bending (PBC-DCB): A Novel Method for Quantitative Evaluation of Bonding Strength for Wafer-to-Wafer and Die-to-Wafer Hybrid Bonding. Micromachines, 16(12), 1304. https://doi.org/10.3390/mi16121304

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