Xiong, J.; Xie, X.; Wei, J.; Sun, S.; Luo, X.
Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer. Micromachines 2024, 15, 1158.
https://doi.org/10.3390/mi15091158
AMA Style
Xiong J, Xie X, Wei J, Sun S, Luo X.
Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer. Micromachines. 2024; 15(9):1158.
https://doi.org/10.3390/mi15091158
Chicago/Turabian Style
Xiong, Juan, Xintong Xie, Jie Wei, Shuxiang Sun, and Xiaorong Luo.
2024. "Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer" Micromachines 15, no. 9: 1158.
https://doi.org/10.3390/mi15091158
APA Style
Xiong, J., Xie, X., Wei, J., Sun, S., & Luo, X.
(2024). Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer. Micromachines, 15(9), 1158.
https://doi.org/10.3390/mi15091158