Zheng, X.; Wu, Y.; Dong, H.; Liu, Y.; Sang, P.; Xiao, L.; Zhan, X.
Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability. Micromachines 2024, 15, 1060.
https://doi.org/10.3390/mi15091060
AMA Style
Zheng X, Wu Y, Dong H, Liu Y, Sang P, Xiao L, Zhan X.
Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability. Micromachines. 2024; 15(9):1060.
https://doi.org/10.3390/mi15091060
Chicago/Turabian Style
Zheng, Xuesong, Yifan Wu, Haitao Dong, Yizhi Liu, Pengpeng Sang, Liyi Xiao, and Xuepeng Zhan.
2024. "Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability" Micromachines 15, no. 9: 1060.
https://doi.org/10.3390/mi15091060
APA Style
Zheng, X., Wu, Y., Dong, H., Liu, Y., Sang, P., Xiao, L., & Zhan, X.
(2024). Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability. Micromachines, 15(9), 1060.
https://doi.org/10.3390/mi15091060
