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Micromachines2024, 15(3), 321;https://doi.org/10.3390/mi15030321

Journal: MicromachinesVolume: 15Number: 321

Article: Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Authors:
Pengfei Dai¹,
Shaowei Wang² and
Hongliang Lu^2,*

Link: https://www.mdpi.com/2072-666X/15/3/321

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