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Journal: MicromachinesVolume: 15Number: 171
Article: Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures
- Authors:
- Dongsheng Zhao1,2,
- Liang He2,* and
- Lijuan Wu1,*
- et al.
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