Order Article Reprints

Zhao D, He L, Wu L, Xiao Q, Liu C, Chen Y, He Z, Yang D, Lv M, Cheng Z. Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN_x Gate Dielectric at Different Temperatures. Micromachines. 2024; 15(2):171. https://doi.org/10.3390/mi15020171

Zhao, Dongsheng, Liang He, Lijuan Wu, Qingzhong Xiao, Chang Liu, Yuan Chen, Zhiyuan He, Deqiang Yang, Mingen Lv, and Zijun Cheng. 2024. "Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN_x Gate Dielectric at Different Temperatures" Micromachines 15, no. 2: 171. https://doi.org/10.3390/mi15020171

Zhao, D., He, L., Wu, L., Xiao, Q., Liu, C., Chen, Y., He, Z., Yang, D., Lv, M., & Cheng, Z. (2024). Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN_x Gate Dielectric at Different Temperatures. Micromachines, 15(2), 171. https://doi.org/10.3390/mi15020171