Article Versions Notes

Wu Y, Ma X, Yu L, Feng X, Zhao S, Zhang W, Zhang J, Hao Y. High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate. Micromachines. 2024; 15(11):1343. https://doi.org/10.3390/mi15111343

Wu, Yinhe, Xingchi Ma, Longyang Yu, Xin Feng, Shenglei Zhao, Weihang Zhang, Jincheng Zhang, and Yue Hao. 2024. "High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate" Micromachines 15, no. 11: 1343. https://doi.org/10.3390/mi15111343

Wu, Y., Ma, X., Yu, L., Feng, X., Zhao, S., Zhang, W., Zhang, J., & Hao, Y. (2024). High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate. Micromachines, 15(11), 1343. https://doi.org/10.3390/mi15111343