Yu, Q.; Shi, C.; Yang, L.; Lu, H.; Zhang, M.; Zou, X.; Wu, M.; Hou, B.; Gao, W.; Wu, S.;
et al. Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer. Micromachines 2024, 15, 1220.
https://doi.org/10.3390/mi15101220
AMA Style
Yu Q, Shi C, Yang L, Lu H, Zhang M, Zou X, Wu M, Hou B, Gao W, Wu S,
et al. Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer. Micromachines. 2024; 15(10):1220.
https://doi.org/10.3390/mi15101220
Chicago/Turabian Style
Yu, Qian, Chunzhou Shi, Ling Yang, Hao Lu, Meng Zhang, Xu Zou, Mei Wu, Bin Hou, Wenze Gao, Sheng Wu,
and et al. 2024. "Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer" Micromachines 15, no. 10: 1220.
https://doi.org/10.3390/mi15101220
APA Style
Yu, Q., Shi, C., Yang, L., Lu, H., Zhang, M., Zou, X., Wu, M., Hou, B., Gao, W., Wu, S., Ma, X., & Hao, Y.
(2024). Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer. Micromachines, 15(10), 1220.
https://doi.org/10.3390/mi15101220