Article Versions Notes

Han Z, Chen S, Liu H, Wang S, Ma B, Chen R, Fu X. A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection. Micromachines. 2024; 15(1):96. https://doi.org/10.3390/mi15010096

Han, Zeen, Shupeng Chen, Hongxia Liu, Shulong Wang, Boyang Ma, Ruibo Chen, and Xiaojun Fu. 2024. "A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection" Micromachines 15, no. 1: 96. https://doi.org/10.3390/mi15010096

Han, Z., Chen, S., Liu, H., Wang, S., Ma, B., Chen, R., & Fu, X. (2024). A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection. Micromachines, 15(1), 96. https://doi.org/10.3390/mi15010096