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Journal: Micromachines, 2023
Volume: 14
Number: 1183

Article: AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO2 as Passivation and Dielectric Layers
Authors: by Yu-Shyan Lin and Chi-Che Lu
Link: https://www.mdpi.com/2072-666X/14/6/1183

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