Langpoklakpam, C.; Liu, A.-C.; You, N.-J.; Kao, M.-H.; Huang, W.-H.; Shen, C.-H.; Tzou, J.; Kuo, H.-C.; Shieh, J.-M.
Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs. Micromachines 2023, 14, 576.
https://doi.org/10.3390/mi14030576
AMA Style
Langpoklakpam C, Liu A-C, You N-J, Kao M-H, Huang W-H, Shen C-H, Tzou J, Kuo H-C, Shieh J-M.
Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs. Micromachines. 2023; 14(3):576.
https://doi.org/10.3390/mi14030576
Chicago/Turabian Style
Langpoklakpam, Catherine, An-Chen Liu, Neng-Jie You, Ming-Hsuan Kao, Wen-Hsien Huang, Chang-Hong Shen, Jerry Tzou, Hao-Chung Kuo, and Jia-Min Shieh.
2023. "Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs" Micromachines 14, no. 3: 576.
https://doi.org/10.3390/mi14030576
APA Style
Langpoklakpam, C., Liu, A.-C., You, N.-J., Kao, M.-H., Huang, W.-H., Shen, C.-H., Tzou, J., Kuo, H.-C., & Shieh, J.-M.
(2023). Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs. Micromachines, 14(3), 576.
https://doi.org/10.3390/mi14030576
