Yan, S.; Lu, H.; Cheng, L.; Qiao, J.; Cheng, W.; Zhang, Y.
Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs. Micromachines 2023, 14, 2073.
https://doi.org/10.3390/mi14112073
AMA Style
Yan S, Lu H, Cheng L, Qiao J, Cheng W, Zhang Y.
Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs. Micromachines. 2023; 14(11):2073.
https://doi.org/10.3390/mi14112073
Chicago/Turabian Style
Yan, Silu, Hongliang Lu, Lin Cheng, Jiantao Qiao, Wei Cheng, and Yuming Zhang.
2023. "Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs" Micromachines 14, no. 11: 2073.
https://doi.org/10.3390/mi14112073
APA Style
Yan, S., Lu, H., Cheng, L., Qiao, J., Cheng, W., & Zhang, Y.
(2023). Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs. Micromachines, 14(11), 2073.
https://doi.org/10.3390/mi14112073