Article Versions Notes

Ramesh S, Ajaykumar A, Ragnarsson L-Å, Breuil L, El Hajjam GK, Kaczer B, Belmonte A, Nyns L, Soulié J-P, Van den bosch G, et al. Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories. Micromachines. 2021; 12(9):1084. https://doi.org/10.3390/mi12091084

Ramesh, Sivaramakrishnan, Arjun Ajaykumar, Lars-Åke Ragnarsson, Laurent Breuil, Gabriel Khalil El Hajjam, Ben Kaczer, Attilio Belmonte, Laura Nyns, Jean-Philippe Soulié, Geert Van den bosch, and et al. 2021. "Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories" Micromachines 12, no. 9: 1084. https://doi.org/10.3390/mi12091084

Ramesh, S., Ajaykumar, A., Ragnarsson, L.-Å., Breuil, L., El Hajjam, G. K., Kaczer, B., Belmonte, A., Nyns, L., Soulié, J.-P., Van den bosch, G., & Rosmeulen, M. (2021). Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories. Micromachines, 12(9), 1084. https://doi.org/10.3390/mi12091084