Yoon, Y.J.; Lee, J.S.; Kang, I.M.; Lee, J.H.; Kim, D.S.
Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density. Micromachines 2020, 11, 1100.
https://doi.org/10.3390/mi11121100
AMA Style
Yoon YJ, Lee JS, Kang IM, Lee JH, Kim DS.
Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density. Micromachines. 2020; 11(12):1100.
https://doi.org/10.3390/mi11121100
Chicago/Turabian Style
Yoon, Young Jun, Jae Sang Lee, In Man Kang, Jung Hee Lee, and Dong Seok Kim.
2020. "Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density" Micromachines 11, no. 12: 1100.
https://doi.org/10.3390/mi11121100
APA Style
Yoon, Y. J., Lee, J. S., Kang, I. M., Lee, J. H., & Kim, D. S.
(2020). Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density. Micromachines, 11(12), 1100.
https://doi.org/10.3390/mi11121100