Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Mu, F.; Xu, Y.; Shin, S.; Wang, Y.; Xu, H.; Shang, H.; Sun, Y.; Yue, L.; Tsuyuki, T.; Suga, T.; et al. Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor. Micromachines 2019, 10, 635. https://doi.org/10.3390/mi10100635
Mu F, Xu Y, Shin S, Wang Y, Xu H, Shang H, Sun Y, Yue L, Tsuyuki T, Suga T, et al. Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor. Micromachines. 2019; 10(10):635. https://doi.org/10.3390/mi10100635
Chicago/Turabian StyleMu, Fengwen, Yang Xu, Seongbin Shin, Yinghui Wang, Hengyu Xu, Haiping Shang, Yechao Sun, Lei Yue, Tatsurou Tsuyuki, Tadatomo Suga, and et al. 2019. "Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor" Micromachines 10, no. 10: 635. https://doi.org/10.3390/mi10100635