Mu, F.; Xu, Y.; Shin, S.; Wang, Y.; Xu, H.; Shang, H.; Sun, Y.; Yue, L.; Tsuyuki, T.; Suga, T.;
et al. Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor. Micromachines 2019, 10, 635.
https://doi.org/10.3390/mi10100635
AMA Style
Mu F, Xu Y, Shin S, Wang Y, Xu H, Shang H, Sun Y, Yue L, Tsuyuki T, Suga T,
et al. Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor. Micromachines. 2019; 10(10):635.
https://doi.org/10.3390/mi10100635
Chicago/Turabian Style
Mu, Fengwen, Yang Xu, Seongbin Shin, Yinghui Wang, Hengyu Xu, Haiping Shang, Yechao Sun, Lei Yue, Tatsurou Tsuyuki, Tadatomo Suga,
and et al. 2019. "Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor" Micromachines 10, no. 10: 635.
https://doi.org/10.3390/mi10100635
APA Style
Mu, F., Xu, Y., Shin, S., Wang, Y., Xu, H., Shang, H., Sun, Y., Yue, L., Tsuyuki, T., Suga, T., Wang, W., & Chen, D.
(2019). Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor. Micromachines, 10(10), 635.
https://doi.org/10.3390/mi10100635