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Journal: MaterialsVolume: 8Number: 5263
Article: Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition
  • Authors:
  • Shuxian Cai1,
  • Zhonghua Liu1 and
  • Ni Zhong1
  • et al.
Link: https://www.mdpi.com/1996-1944/8/9/5263

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