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Open AccessArticle

Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition

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National Research Center of Engineering Technology for Utilization of Functional Ingredients from Botanicals, Hunan Agriculture University, Changsha 410128, China
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Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
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Author to whom correspondence should be addressed.
Academic Editor: Nicola Pugno
Materials 2015, 8(9), 5586-5596; https://doi.org/10.3390/ma8095263
Received: 28 July 2015 / Revised: 18 August 2015 / Accepted: 19 August 2015 / Published: 26 August 2015
(This article belongs to the Section Structure Analysis and Characterization)
The Si(0001) face and C(000-1) face dependences on growth pressure of epitaxial graphene (EG) grown on 4H-SiC substrates by ethene chemical vapor deposition (CVD) was studied using atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). AFM revealed that EGs on Si-faced substrates had clear stepped morphologies due to surface step bunching. However, This EG formation did not occur on C-faced substrates. It was shown by μ-Raman that the properties of EG on both polar faces were different. EGs on Si-faced substrates were relatively thinner and more uniform than on C-faced substrates at low growth pressure. On the other hand, D band related defects always appeared in EGs on Si-faced substrates, but they did not appear in EG on C-faced substrate at an appropriate growth pressure. This was due to the μ-Raman covering the step edges when measurements were performed on Si-faced substrates. The results of this study are useful for optimized growth of EG on polar surfaces of SiC substrates. View Full-Text
Keywords: face dependences; epitaxial graphene; chemical vapor deposition; 4H-SiC; growth pressure face dependences; epitaxial graphene; chemical vapor deposition; 4H-SiC; growth pressure
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Cai, S.; Liu, Z.; Zhong, N.; Liu, S.; Liu, X. Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition. Materials 2015, 8, 5586-5596.

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